imazh | Pjesa kryesore # / Prodhuesi | Përshkrimi / PDF | Sasia / RFQ |
---|---|---|---|
Samsung Semiconductor |
UFS 2.1 32 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 85 °C Mass Production. |
17314copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 32 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 105 °C Mass Production. |
20468copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production. |
23209copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production. |
14362copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 85 °C Mass Production. |
14367copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 105 °C Mass Production. |
14685copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production. |
16279copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 85 °C Mass Production. |
23289copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 105 °C Mass Production. |
14179copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 256 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.72 mm -40 ~ 105 °C Mass Production. |
26335copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 512 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production. |
22600copë aksionesh |
|
Samsung Semiconductor |
UFS 2.1 1 TB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.4 mm -25 ~ 85 °C Mass Production. |
19948copë aksionesh |
|
Samsung Semiconductor |
UFS 3.0 1 TB 1.2 / 2.5 V G4 2Lane 11.5 x 13 x 1.25 mm -25 ~ 85 °C Sample. |
17877copë aksionesh |