SLC Nand, K9F1G08U0F-SIB0, K9F2G08U0D-5IB0, 0

Pjesa kryesore # / Prodhuesi	Përshkrimi / PDF	Sasia / RFQ
K9F1G08U0F-5IB0 Samsung Semiconductor	1 Gb x8 2.7 ~ 3.6 V 40 Mbps FBGA 63 -40 ~ 85 °C On-Chip ECC Sample.	14657copë aksionesh
K9F1G08U0F-SIB0 Samsung Semiconductor	1 Gb x8 2.7 ~ 3.6 V 40 Mbps TSOP 48 -40 ~ 85 °C On-Chip ECC Sample.	16916copë aksionesh
K9F2G08U0D-5IB0 Samsung Semiconductor	2 Gb x8 2.7 ~ 3.6 V 40 Mbps FBGA 63 -40 ~ 85 °C On-Chip ECC Sample.	26550copë aksionesh
K9F2G08U0D-SIB0 Samsung Semiconductor	2 Gb x8 2.7 ~ 3.6 V 40 Mbps TSOP 48 -40 ~ 85 °C On-Chip ECC Sample.	15463copë aksionesh
K9F4G08U0F-5IB0 Samsung Semiconductor	4 Gb x8 2.7 ~ 3.6 V 40 Mbps FBGA 63 -40 ~ 85 °C On-Chip ECC Sample.	22980copë aksionesh
K9F4G08U0F-SIB0 Samsung Semiconductor	4 Gb x8 2.7 ~ 3.6 V 40 Mbps TSOP 48 -40 ~ 85 °C On-Chip ECC Sample.	15088copë aksionesh
K9F8G08U0F-5IB0 Samsung Semiconductor	8 Gb x8 2.7 ~ 3.6 V 40 Mbps FBGA 63 -40 ~ 85 °C On-Chip ECC Sample.	18687copë aksionesh
K9K8G08U0F-SIB0 Samsung Semiconductor	8 Gb x8 2.7 ~ 3.6 V 40 Mbps TSOP 48 -40 ~ 85 °C On-Chip ECC Sample.	21002copë aksionesh
K9WAG08U1F-SIB0 Samsung Semiconductor	16 Gb x8 2.7 ~ 3.6 V 40 Mbps TSOP 48 -40 ~ 85 °C On-Chip ECC Sample.	21761copë aksionesh