Wolfspeed
Wolfspeed
- Cree’s power and RF division is now known as Wolfspeed, A Cree Company. Wolfspeed is liberating power and wireless systems from the limitations of silicon by leading the innovation and commercialization of next-generation systems based on silicon carbide and gallium nitride.
Kategoria e produkteve
Produkte diskrete gjysmëpërçuese
RF / IF dhe RFID
Bordet e Zhvillimit, Paketat, Programuesit
Produktet më të reja
Wolfspeed E-Series AEC-Q101 Silicon Carbide Diodes are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets.
data: 2019-09-17Wolfspeed C3M0032120K Silicon Carbide Power MOSFETs are designed using C3M™ MOSFET Technology.
data: 2019-08-09Wolfspeed CGD12HBXMP Dual Channel Differential Isolated Gate Driver evaluates the two-channel gate driver for the XM3 SiC half-bridge power modules.
data: 2019-07-12Wolfspeed CGD12HB00D Differential Transceiver Companion Tool evaluates the two-channel gate driver for the XM3 SiC half bridge power modules.
data: 2019-07-12Wolfspeed CAB450M12XM3 1200V 450A All-Silicon Carbide Half-Bridge Module maximizes power density while minimizing loop inductance and enabling simple power bussing.
data: 2019-07-12Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimized package.
data: 2019-06-10Wolfspeed 6th Generation 650V C6D SiC Schottky Diodes demonstrate technological innovation and achieve highest system level efficiency in a PFC boost converter.
data: 2019-05-29Wolfspeed / Cree CMPA5259050F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for radar power amplifiers.
data: 2019-05-17Wolfspeed / Cree CMPA0527005F-AMP Demonstration Amplifier Circuit offers a test board with the CMPA0527005F GaN MMICs in a 6-leaded flange package installed.
data: 2019-05-17Wolfspeed / Cree CMPA2735075F1-AMP Demonstration Amplifier Circuit offers a test board with the CMPA2735075F GaN MMICs in a 0.5" square screw-down package installed.
data: 2019-05-17Wolfspeed / Cree KIT-CRD-3DD12P Buck-Boost Evaluation Kit is designed to demonstrate the high-speed switching performance of Cree’s 3rd Generation (C3M™) SiC MOSFETs in the TO-247-4L package.
data: 2019-05-15Wolfspeed / Cree CMPA5259025F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for radar power amplifiers.
data: 2019-05-15Wolfspeed / Cree CMPA0527005F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for power amplifiers.
data: 2019-05-15Wolfspeed / Cree CMPA5259025F-AMP Demonstration Amplifier Circuit offers a test board with the CMPA5259025F GaN MMICs in a ceramic/metal flange package installed.
data: 2019-05-15Wolfspeed / Cree CMPA5259050F-AMP Demonstration Amplifier Circuit offers a test board with the CMPA5259050F GaN MMICs in a ceramic/metal flange package installed.
data: 2019-05-15Wolfspeed / Cree GTVA High Power RF GaN on SiC HEMT are 50V High Electron Mobility Transistors (HEMT) based on Gallium-Nitride on Silicon Carbide technology.
data: 2019-04-30Wolfspeed / Cree C5D 1700V Z-Rec SiC Schottky Diodes are optimized for high voltage, high power environments.
data: 2019-01-28Wolfspeed E-Series AEC-Q101 Silicon Carbide MOSFETs are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets.
data: 2018-09-24Wolfspeed/Cree CGD15SG00D2 Gate Driver Board is designed to evaluate the 3rd generation (C3M) of SiC MOSFETs.
data: 2018-04-16Wolfspeed/Cree KIT8020-CRD-5FF0917P-2 Evaluation Board is designed to demonstrate the switching performance of C3M0075120K SiC MOSFET in a TO-247-4 package.
data: 2018-04-16
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