DDR4, K4A8G085WB-BITD, K4A8G085WC-BCPB, 2

Pjesa kryesore # / Prodhuesi	Përshkrimi / PDF	Sasia / RFQ
K4A8G085WB-BIRC Samsung Semiconductor	8 Gb 1G x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	21766copë aksionesh
K4A8G085WB-BITD Samsung Semiconductor	8 Gb 1G x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	19189copë aksionesh
K4A8G085WC-BCPB Samsung Semiconductor	8 Gb 1G x 8 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	16597copë aksionesh
K4A8G085WC-BCRC Samsung Semiconductor	8 Gb 1G x 8 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	24489copë aksionesh
K4A8G085WC-BCTD Samsung Semiconductor	8 Gb 1G x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	19231copë aksionesh
K4A8G085WC-BCWE Samsung Semiconductor	8 Gb 1G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	21766copë aksionesh
K4A8G085WC-BITD Samsung Semiconductor	8 Gb 1G x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	23945copë aksionesh
K4A8G085WC-BIWE Samsung Semiconductor	8 Gb 1G x 8 3200 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	14142copë aksionesh
K4A8G165WB-BCPB Samsung Semiconductor	8 Gb 512M x 16 2133 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	24170copë aksionesh
K4A8G165WB-BCRC Samsung Semiconductor	8 Gb 512M x 16 2400 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	25018copë aksionesh
K4A8G165WB-BCTD Samsung Semiconductor	8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	25398copë aksionesh
K4A8G165WB-BCWE Samsung Semiconductor	8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	24756copë aksionesh
K4A8G165WB-BIRC Samsung Semiconductor	8 Gb 512M x 16 2400 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	20416copë aksionesh
K4A8G165WB-BITD Samsung Semiconductor	8 Gb 512M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	26874copë aksionesh
K4A8G165WB-BIWE Samsung Semiconductor	8 Gb 512M x 16 3200 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	19714copë aksionesh
K4A8G165WC-BCPB Samsung Semiconductor	8 Gb 512M x 16 2133 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	17010copë aksionesh
K4A8G165WC-BCRC Samsung Semiconductor	8 Gb 512M x 16 2400 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	24976copë aksionesh
K4A8G165WC-BCTD Samsung Semiconductor	8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	20430copë aksionesh
K4A8G165WC-BCWE Samsung Semiconductor	8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	26293copë aksionesh
K4A8G165WC-BITD Samsung Semiconductor	8 Gb 512M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	16752copë aksionesh

DDR4

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