DDR4


imazh Pjesa kryesore # / Prodhuesi Përshkrimi / PDF Sasia / RFQ
K4A8G165WC-BIWE

K4A8G165WC-BIWE

Samsung Semiconductor

8 Gb 512M x 16 3200 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.

17075copë aksionesh

K4AAG085WA-BCTD

K4AAG085WA-BCTD

Samsung Semiconductor

16 Gb 2G x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

21058copë aksionesh

K4AAG085WA-BCWE

K4AAG085WA-BCWE

Samsung Semiconductor

16 Gb 2G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Sample.

26892copë aksionesh

K4AAG085WB-MCPB

K4AAG085WB-MCPB

Samsung Semiconductor

16 Gb 2G x 8 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

17877copë aksionesh

K4AAG085WB-MCRC

K4AAG085WB-MCRC

Samsung Semiconductor

16 Gb 2G x 8 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

20885copë aksionesh

K4AAG165WA-BCTD

K4AAG165WA-BCTD

Samsung Semiconductor

16 Gb 1G x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

23631copë aksionesh

K4AAG165WA-BCWE

K4AAG165WA-BCWE

Samsung Semiconductor

16 Gb 1G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

15192copë aksionesh

K4AAG165WB-MCPB

K4AAG165WB-MCPB

Samsung Semiconductor

16 Gb 1G x 16 2133 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

17263copë aksionesh

K4AAG165WB-MCRC

K4AAG165WB-MCRC

Samsung Semiconductor

16 Gb 1G x 16 2400 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

26668copë aksionesh

K4AAG165WB-MCTD

K4AAG165WB-MCTD

Samsung Semiconductor

16 Gb 1G x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

15023copë aksionesh

K4ABG085WA-MCTD

K4ABG085WA-MCTD

Samsung Semiconductor

32 Gb 4G x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

20416copë aksionesh

K4ABG085WA-MCWE

K4ABG085WA-MCWE

Samsung Semiconductor

32 Gb 4G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Sample.

16719copë aksionesh

K4ABG165WA-MCTD

K4ABG165WA-MCTD

Samsung Semiconductor

32 Gb 2G x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

21405copë aksionesh

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