LPDDR4, K4FHE3D4HA-GFCL, K4FHE3D4HA-GHCL, 2

Pjesa kryesore # / Prodhuesi	Përshkrimi / PDF	Sasia / RFQ
K4FBE3D4HM-GUCL Samsung Semiconductor	32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.	20290copë aksionesh
K4FHE3D4HA-GFCL Samsung Semiconductor	24 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	19184copë aksionesh
K4FHE3D4HA-GHCL Samsung Semiconductor	24 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	20997copë aksionesh
K4FHE3D4HA-GUCL Samsung Semiconductor	24 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.	20257copë aksionesh
K4FHE3D4HM-MFCJ Samsung Semiconductor	24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production.	24245copë aksionesh
K4FHE3D4HM-MHCJ Samsung Semiconductor	24 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.	20140copë aksionesh