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Nëse vendndodhja juaj nuk është e shënuar, ju lutemi zgjidhni një nga sa vijon:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. K4FHE3D4HA-GHCL

Samsung Semiconductor - K4FHE3D4HA-GHCL

KEY Part #: K7359778

[20997copë aksionesh]

    Numri i pjesës:
    K4FHE3D4HA-GHCL
    prodhues:
    Samsung Semiconductor
    Pershkrim i detajuar:
    24 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Koha standarde e plumbit të prodhuesit:
    Në magazinë
    Jetëgjatësia:
    Nje vit
    Ipipi Nga:
    Hong Kong
    RoHS:
    Metoda e pagesës:
    Mënyra e dërgesës:
    Kategoritë familjare:
    Komponentët kyç Co, LTD është një distributori i Komponentëve Elektronikë i cili ofron kategori të produkteve duke përfshirë: HBM Flarebolt, DDR4, MODULE, GDDR5, LPDDR5, LPDDR3, HBM Aquabolt and DDR3 ...
    Avantazhi Konkurrues:
    We specialize in Samsung Semiconductor K4FHE3D4HA-GHCL electronic components. K4FHE3D4HA-GHCL can be shipped within 24 hours after order. If you have any demands for K4FHE3D4HA-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FHE3D4HA-GHCL Atributet e produkteve

    Numri i pjesës : K4FHE3D4HA-GHCL
    prodhues : Samsung Semiconductor
    Përshkrim : 24 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    seri : DDR3
    densitet : 24 Gb
    Org. : x32
    shpejtësi : 4266 Mbps
    tension : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    paketë : 200FBGA
    produkt Status : Mass Production

    Lajmet e fundit

    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Automotive Driven by Small Packages Under the Hood
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Evolving Mobile Solutions: Samsung at MWC 2018
    The Ultra-Low Latency SSD, Z-SSD
    How Will 5G Impact on Memory?
    SSDs, DRAM and gaming: Unlocking a new level of performance
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Mass Production of Fifth-Generation V-NAND has Started
    Driving the Artificial Intelligence Evolution with In-Memory Computing
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