LPDDR4X, K4UBE3D4AA-MGCL, K4UBE3D4AM-GFCL, 2

Pjesa kryesore # / Prodhuesi	Përshkrimi / PDF	Sasia / RFQ
K4U8E3S4AD-GUCL Samsung Semiconductor	8 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.	20177copë aksionesh
K4UBE3D4AA-MGCL Samsung Semiconductor	32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production.	17741copë aksionesh
K4UBE3D4AM-GFCL Samsung Semiconductor	32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.	14118copë aksionesh
K4UBE3D4AM-GHCL Samsung Semiconductor	32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.	16429copë aksionesh
K4UBE3D4AM-GUCL Samsung Semiconductor	32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.	25749copë aksionesh
K4UCE3Q4AA-MGCL Samsung Semiconductor	64 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production.	26026copë aksionesh
K4UHE3D4AA-GFCL Samsung Semiconductor	24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.	25712copë aksionesh
K4UHE3D4AA-GHCL Samsung Semiconductor	24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.	23298copë aksionesh
K4UHE3D4AA-GUCL Samsung Semiconductor	24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.	25313copë aksionesh