LPDDR4X


imazh Pjesa kryesore # / Prodhuesi Përshkrimi / PDF Sasia / RFQ
K4U8E3S4AD-GUCL

K4U8E3S4AD-GUCL

Samsung Semiconductor

8 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.

20177copë aksionesh

K4UBE3D4AA-MGCL

K4UBE3D4AA-MGCL

Samsung Semiconductor

32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production.

17741copë aksionesh

K4UBE3D4AM-GFCL

K4UBE3D4AM-GFCL

Samsung Semiconductor

32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.

14118copë aksionesh

K4UBE3D4AM-GHCL

K4UBE3D4AM-GHCL

Samsung Semiconductor

32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.

16429copë aksionesh

K4UBE3D4AM-GUCL

K4UBE3D4AM-GUCL

Samsung Semiconductor

32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.

25749copë aksionesh

K4UCE3Q4AA-MGCL

K4UCE3Q4AA-MGCL

Samsung Semiconductor

64 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 200FBGA Mass Production.

26026copë aksionesh

K4UHE3D4AA-GFCL

K4UHE3D4AA-GFCL

Samsung Semiconductor

24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.

25712copë aksionesh

K4UHE3D4AA-GHCL

K4UHE3D4AA-GHCL

Samsung Semiconductor

24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.

23298copë aksionesh

K4UHE3D4AA-GUCL

K4UHE3D4AA-GUCL

Samsung Semiconductor

24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.

25313copë aksionesh

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