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Nëse vendndodhja juaj nuk është e shënuar, ju lutemi zgjidhni një nga sa vijon:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. K4UBE3D4AM-GUCL

Samsung Semiconductor - K4UBE3D4AM-GUCL

KEY Part #: K7359751

[25749copë aksionesh]

    Numri i pjesës:
    K4UBE3D4AM-GUCL
    prodhues:
    Samsung Semiconductor
    Pershkrim i detajuar:
    32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.
    Koha standarde e plumbit të prodhuesit:
    Në magazinë
    Jetëgjatësia:
    Nje vit
    Ipipi Nga:
    Hong Kong
    RoHS:
    Metoda e pagesës:
    Mënyra e dërgesës:
    Kategoritë familjare:
    Komponentët kyç Co, LTD është një distributori i Komponentëve Elektronikë i cili ofron kategori të produkteve duke përfshirë: SLC Nand, LPDDR5, HBM Aquabolt, DDR4, HBM Flarebolt, LPDDR4X, MODULE and DDR3 ...
    Avantazhi Konkurrues:
    We specialize in Samsung Semiconductor K4UBE3D4AM-GUCL electronic components. K4UBE3D4AM-GUCL can be shipped within 24 hours after order. If you have any demands for K4UBE3D4AM-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4UBE3D4AM-GUCL Atributet e produkteve

    Numri i pjesës : K4UBE3D4AM-GUCL
    prodhues : Samsung Semiconductor
    Përshkrim : 32 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production
    seri : DDR3
    densitet : 32 Gb
    Org. : x32
    shpejtësi : 4266 Mbps
    tension : 1.8 / 1.1 / 0.6 V
    Temp. : -40 ~ 125 °C
    paketë : 200FBGA
    produkt Status : Mass Production

    Lajmet e fundit

    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Mission Peak Reference Server System for NGSFF SSD
    Autonomous Driving and the Quest for Safety
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Speed for the next generation of mobile devices
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Automotive Driven by Small Packages Under the Hood
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
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