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Nëse vendndodhja juaj nuk është e shënuar, ju lutemi zgjidhni një nga sa vijon:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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Samsung Semiconductor - M393A4G43AB3-CVF

KEY Part #: K7359890

[21138copë aksionesh]

    Numri i pjesës:
    M393A4G43AB3-CVF
    prodhues:
    Samsung Semiconductor
    Pershkrim i detajuar:
    DDR4 RDIMM 32 GB 2R x 8 2933 Mbps 1.2 V 288 (2G x 8) x 18 Sample.
    Koha standarde e plumbit të prodhuesit:
    Në magazinë
    Jetëgjatësia:
    Nje vit
    Ipipi Nga:
    Hong Kong
    RoHS:
    Metoda e pagesës:
    Mënyra e dërgesës:
    Kategoritë familjare:
    Komponentët kyç Co, LTD është një distributori i Komponentëve Elektronikë i cili ofron kategori të produkteve duke përfshirë: HBM Flarebolt, GDDR6, MODULE, LPDDR5, LPDDR4, GDDR5, LPDDR4X and DDR3 ...
    Avantazhi Konkurrues:
    We specialize in Samsung Semiconductor M393A4G43AB3-CVF electronic components. M393A4G43AB3-CVF can be shipped within 24 hours after order. If you have any demands for M393A4G43AB3-CVF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393A4G43AB3-CVF Atributet e produkteve

    Numri i pjesës : M393A4G43AB3-CVF
    prodhues : Samsung Semiconductor
    Përshkrim : DDR4 RDIMM 32 GB 2R x 8 2933 Mbps 1.2 V 288 (2G x 8) x 18 Sample
    seri : DDR3
    DDR : DDR4
    DIMM Lloji : RDIMM
    densitet : 32 GB
    Rank x Org. : 2R x 8
    shpejtësi : 2933 Mbps
    tension : 1.2 V
    Nr i Pin : 288
    Komponenti Përbërja : (2G x 8) x 18
    produkt Status : Sample

    Lajmet e fundit

    How Will 5G Impact on Memory?
    [Video] 5G memory solutions : 5G. All in the Memory.
    Mass Production of Fifth-Generation V-NAND has Started
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Inside the building blocks of the 5G future
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Automotive Driven by Small Packages Under the Hood
    Mission Peak Reference Server System for NGSFF SSD
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
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