| imazh | Pjesa kryesore # / Prodhuesi | Përshkrimi / PDF | Sasia / RFQ |
|---|---|---|---|
 |
Samsung Semiconductor |
1 Gb 128M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
16579copë aksionesh |
|
Samsung Semiconductor |
1 Gb 128M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
17745copë aksionesh |
|
Samsung Semiconductor |
1 Gb 128M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
24938copë aksionesh |
|
Samsung Semiconductor |
1 Gb 128M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
18031copë aksionesh |
|
Samsung Semiconductor |
1 Gb 128M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
14414copë aksionesh |
|
Samsung Semiconductor |
1 Gb 128M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
17047copë aksionesh |
|
Samsung Semiconductor |
1 Gb 128M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
14807copë aksionesh |
|
Samsung Semiconductor |
1 Gb 128M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
21953copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
25065copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
19161copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
19667copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
26803copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production. |
21607copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
26686copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
15187copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
21190copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
20093copë aksionesh |
|
Samsung Semiconductor |
1 Gb 64M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
22839copë aksionesh |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
26738copë aksionesh |
|
Samsung Semiconductor |
2 Gb 256M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
24877copë aksionesh |
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