DDR3, K4B4G0846D-BMMA, K4B4G0846D-BYH9, 3

Pjesa kryesore # / Prodhuesi	Përshkrimi / PDF	Sasia / RFQ
K4B4G0846D-BMK0 Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.	18176copë aksionesh
K4B4G0846D-BMMA Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.	14615copë aksionesh
K4B4G0846D-BYH9 Samsung Semiconductor	4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.	17624copë aksionesh
K4B4G0846D-BYK0 Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.	17080copë aksionesh
K4B4G0846D-BYMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.	18490copë aksionesh
K4B4G0846D-BYNB Samsung Semiconductor	4 Gb 512M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.	27150copë aksionesh
K4B4G0846E-BCK0 Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.	26869copë aksionesh
K4B4G0846E-BCMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.	25726copë aksionesh
K4B4G0846E-BMK0 Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.	20829copë aksionesh
K4B4G0846E-BMMA Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.	26040copë aksionesh
K4B4G0846E-BYK0 Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.	14296copë aksionesh
K4B4G0846E-BYMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.	18678copë aksionesh
K4B4G0846E-YCK0 Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.	23312copë aksionesh
K4B4G0846E-YCMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.	20224copë aksionesh
K4B4G0846R-BFMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.	17141copë aksionesh
K4B4G0846R-BHMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production.	24090copë aksionesh
K4B4G1646D-BCH9 Samsung Semiconductor	4 Gb 256M x 16 1333 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.	15623copë aksionesh
K4B4G1646D-BCK0 Samsung Semiconductor	4 Gb 256M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.	18022copë aksionesh
K4B4G1646D-BCMA Samsung Semiconductor	4 Gb 256M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.	16063copë aksionesh
K4B4G1646D-BCNB Samsung Semiconductor	4 Gb 256M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.	25323copë aksionesh

DDR3

Faqet e klasifikimit