DDR3


imazh Pjesa kryesore # / Prodhuesi Përshkrimi / PDF Sasia / RFQ
K4B4G1646D-BFMA

K4B4G1646D-BFMA

Samsung Semiconductor

4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

24999copë aksionesh

K4B4G1646D-BHMA

K4B4G1646D-BHMA

Samsung Semiconductor

4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.

21860copë aksionesh

K4B4G1646D-BMK0

K4B4G1646D-BMK0

Samsung Semiconductor

4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

20248copë aksionesh

K4B4G1646D-BMMA

K4B4G1646D-BMMA

Samsung Semiconductor

4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

21593copë aksionesh

K4B4G1646D-BYH9

K4B4G1646D-BYH9

Samsung Semiconductor

4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

20056copë aksionesh

K4B4G1646D-BYK0

K4B4G1646D-BYK0

Samsung Semiconductor

4 Gb 256M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

21447copë aksionesh

K4B4G1646D-BYMA

K4B4G1646D-BYMA

Samsung Semiconductor

4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

19892copë aksionesh

K4B4G1646D-BYNB

K4B4G1646D-BYNB

Samsung Semiconductor

4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

21068copë aksionesh

K4B4G1646E-BCK0

K4B4G1646E-BCK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

18472copë aksionesh

K4B4G1646E-BCMA

K4B4G1646E-BCMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

15107copë aksionesh

K4B4G1646E-BMK0

K4B4G1646E-BMK0

Samsung Semiconductor

4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

19193copë aksionesh

K4B4G1646E-BMMA

K4B4G1646E-BMMA

Samsung Semiconductor

4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

23462copë aksionesh

K4B4G1646E-BYMA

K4B4G1646E-BYMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

19442copë aksionesh

K4B4G1646E-YCK0

K4B4G1646E-YCK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

25880copë aksionesh

K4B4G1646E-YCMA

K4B4G1646E-YCMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

17661copë aksionesh