DDR3, K4B4G1646D-BHMA, K4B4G1646D-BMK0, 4

Pjesa kryesore # / Prodhuesi	Përshkrimi / PDF	Sasia / RFQ
K4B4G1646D-BFMA Samsung Semiconductor	4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.	24999copë aksionesh
K4B4G1646D-BHMA Samsung Semiconductor	4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.	21860copë aksionesh
K4B4G1646D-BMK0 Samsung Semiconductor	4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.	20248copë aksionesh
K4B4G1646D-BMMA Samsung Semiconductor	4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.	21593copë aksionesh
K4B4G1646D-BYH9 Samsung Semiconductor	4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.	20056copë aksionesh
K4B4G1646D-BYK0 Samsung Semiconductor	4 Gb 256M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.	21447copë aksionesh
K4B4G1646D-BYMA Samsung Semiconductor	4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.	19892copë aksionesh
K4B4G1646D-BYNB Samsung Semiconductor	4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.	21068copë aksionesh
K4B4G1646E-BCK0 Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.	18472copë aksionesh
K4B4G1646E-BCMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.	15107copë aksionesh
K4B4G1646E-BMK0 Samsung Semiconductor	4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.	19193copë aksionesh
K4B4G1646E-BMMA Samsung Semiconductor	4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.	23462copë aksionesh
K4B4G1646E-BYMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.	19442copë aksionesh
K4B4G1646E-YCK0 Samsung Semiconductor	4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.	25880copë aksionesh
K4B4G1646E-YCMA Samsung Semiconductor	4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.	17661copë aksionesh

DDR3

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