DDR3


imazh Pjesa kryesore # / Prodhuesi Përshkrimi / PDF Sasia / RFQ
K4B2G0846F-BCNB

K4B2G0846F-BCNB

Samsung Semiconductor

2 Gb 256M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

16996copë aksionesh

K4B2G0846F-BMK0

K4B2G0846F-BMK0

Samsung Semiconductor

2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

22539copë aksionesh

K4B2G0846F-BMMA

K4B2G0846F-BMMA

Samsung Semiconductor

2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

21400copë aksionesh

K4B2G0846F-BYK0

K4B2G0846F-BYK0

Samsung Semiconductor

2 Gb 256M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

25337copë aksionesh

K4B2G0846F-BYMA

K4B2G0846F-BYMA

Samsung Semiconductor

2 Gb 256M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

22178copë aksionesh

K4B2G0846F-BYNB

K4B2G0846F-BYNB

Samsung Semiconductor

2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

20824copë aksionesh

K4B2G1646F-BCK0

K4B2G1646F-BCK0

Samsung Semiconductor

2 Gb 128M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

23528copë aksionesh

K4B2G1646F-BCMA

K4B2G1646F-BCMA

Samsung Semiconductor

2 Gb 128M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

14868copë aksionesh

K4B2G1646F-BCNB

K4B2G1646F-BCNB

Samsung Semiconductor

2 Gb 128M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

15955copë aksionesh

K4B2G1646F-BFMA

K4B2G1646F-BFMA

Samsung Semiconductor

2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

21119copë aksionesh

K4B2G1646F-BHMA

K4B2G1646F-BHMA

Samsung Semiconductor

2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.

17431copë aksionesh

K4B2G1646F-BMK0

K4B2G1646F-BMK0

Samsung Semiconductor

2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

22867copë aksionesh

K4B2G1646F-BMMA

K4B2G1646F-BMMA

Samsung Semiconductor

2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

21752copë aksionesh

K4B2G1646F-BYK0

K4B2G1646F-BYK0

Samsung Semiconductor

2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

26091copë aksionesh

K4B2G1646F-BYMA

K4B2G1646F-BYMA

Samsung Semiconductor

2 Gb 128M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

24906copë aksionesh

K4B2G1646F-BYNB

K4B2G1646F-BYNB

Samsung Semiconductor

2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

19090copë aksionesh

K4B4G0846D-BCH9

K4B4G0846D-BCH9

Samsung Semiconductor

4 Gb 512M x 8 1333 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

19788copë aksionesh

K4B4G0846D-BCK0

K4B4G0846D-BCK0

Samsung Semiconductor

4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

14489copë aksionesh

K4B4G0846D-BCMA

K4B4G0846D-BCMA

Samsung Semiconductor

4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

25276copë aksionesh

K4B4G0846D-BCNB

K4B4G0846D-BCNB

Samsung Semiconductor

4 Gb 512M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

16363copë aksionesh