imazh | Pjesa kryesore # / Prodhuesi | Përshkrimi / PDF | Sasia / RFQ |
---|---|---|---|
Samsung Semiconductor |
2 Gb 256M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
16996copë aksionesh |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
22539copë aksionesh |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
21400copë aksionesh |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
25337copë aksionesh |
|
Samsung Semiconductor |
2 Gb 256M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
22178copë aksionesh |
|
Samsung Semiconductor |
2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
20824copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
23528copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
14868copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
15955copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21119copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production. |
17431copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
22867copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21752copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
26091copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
24906copë aksionesh |
|
Samsung Semiconductor |
2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19090copë aksionesh |
|
Samsung Semiconductor |
4 Gb 512M x 8 1333 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
19788copë aksionesh |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
14489copë aksionesh |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
25276copë aksionesh |
|
Samsung Semiconductor |
4 Gb 512M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
16363copë aksionesh |