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Nëse vendndodhja juaj nuk është e shënuar, ju lutemi zgjidhni një nga sa vijon:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. M391B1G73EB0-YK0

Samsung Semiconductor - M391B1G73EB0-YK0

KEY Part #: K7359845

[16340copë aksionesh]

    Numri i pjesës:
    M391B1G73EB0-YK0
    prodhues:
    Samsung Semiconductor
    Pershkrim i detajuar:
    DDR3 UDIMM 8 GB 2R x 8 1600 Mbps 1.35 V 240 (512M x 8) x 18 EOL.
    Koha standarde e plumbit të prodhuesit:
    Në magazinë
    Jetëgjatësia:
    Nje vit
    Ipipi Nga:
    Hong Kong
    RoHS:
    Metoda e pagesës:
    Mënyra e dërgesës:
    Kategoritë familjare:
    Komponentët kyç Co, LTD është një distributori i Komponentëve Elektronikë i cili ofron kategori të produkteve duke përfshirë: DDR4, LPDDR3, LPDDR4X, DDR3, MODULE, LPDDR4, HBM Aquabolt and GDDR6 ...
    Avantazhi Konkurrues:
    We specialize in Samsung Semiconductor M391B1G73EB0-YK0 electronic components. M391B1G73EB0-YK0 can be shipped within 24 hours after order. If you have any demands for M391B1G73EB0-YK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M391B1G73EB0-YK0 Atributet e produkteve

    Numri i pjesës : M391B1G73EB0-YK0
    prodhues : Samsung Semiconductor
    Përshkrim : DDR3 UDIMM 8 GB 2R x 8 1600 Mbps 1.35 V 240 (512M x 8) x 18 EOL
    seri : DDR3
    DDR : DDR3
    DIMM Lloji : UDIMM
    densitet : 8 GB
    Rank x Org. : 2R x 8
    shpejtësi : 1600 Mbps
    tension : 1.35 V
    Nr i Pin : 240
    Komponenti Përbërja : (512M x 8) x 18
    produkt Status : EOL

    Lajmet e fundit

    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Unlocking the Power of Cloud Computing
    Autonomous Driving and the Quest for Safety
    Mission Peak Reference Server System for NGSFF SSD
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    How Will 5G Impact on Memory?
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
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