DDR4, K4ABG165WA-MCWE, K4A4G085WE-BITD, 0

Pjesa kryesore # / Prodhuesi	Përshkrimi / PDF	Sasia / RFQ
K4A4G085WE-BIRC Samsung Semiconductor	4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.	25355copë aksionesh
K4ABG165WA-MCWE Samsung Semiconductor	32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.	22057copë aksionesh
K4A4G085WE-BITD Samsung Semiconductor	4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	20168copë aksionesh
K4A4G085WF-BCTD Samsung Semiconductor	4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	20623copë aksionesh
K4A4G085WF-BITD Samsung Semiconductor	4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.	15426copë aksionesh
K4A4G165WE-BCWE Samsung Semiconductor	4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	14339copë aksionesh
K4A4G165WE-BIRC Samsung Semiconductor	4 Gb 256M x 16 2400 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	24465copë aksionesh
K4A4G165WE-BITD Samsung Semiconductor	4 Gb 256M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	25904copë aksionesh
K4A4G165WE-BIWE Samsung Semiconductor	4 Gb 256M x 16 3200 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	15824copë aksionesh
K4A4G165WF-BCTD Samsung Semiconductor	4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	26724copë aksionesh
K4A4G165WF-BITD Samsung Semiconductor	4 Gb 256M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Sample.	19606copë aksionesh
K4A8G045WB-BCPB Samsung Semiconductor	8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	16925copë aksionesh
K4A8G045WB-BCRC Samsung Semiconductor	8 Gb 2G x 4 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	24868copë aksionesh
K4A8G045WB-BCTD Samsung Semiconductor	8 Gb 2G x 4 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	20149copë aksionesh
K4A8G045WC-BCPB Samsung Semiconductor	8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	25205copë aksionesh
K4A8G045WC-BCRC Samsung Semiconductor	8 Gb 2G x 4 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	25285copë aksionesh
K4A8G045WC-BCTD Samsung Semiconductor	8 Gb 2G x 4 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	23631copë aksionesh
K4A8G085WB-BCPB Samsung Semiconductor	8 Gb 1G x 8 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	15126copë aksionesh
K4A8G085WB-BCRC Samsung Semiconductor	8 Gb 1G x 8 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	16925copë aksionesh
K4A8G085WB-BCTD Samsung Semiconductor	8 Gb 1G x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	25191copë aksionesh

DDR4

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