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Nëse vendndodhja juaj nuk është e shënuar, ju lutemi zgjidhni një nga sa vijon:

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  1. shtëpi
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  3. DRAM
  4. DDR3
  5. K4B2G1646F-BYNB

Samsung Semiconductor - K4B2G1646F-BYNB

KEY Part #: K7359666

[19090copë aksionesh]

    Numri i pjesës:
    K4B2G1646F-BYNB
    prodhues:
    Samsung Semiconductor
    Pershkrim i detajuar:
    2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Koha standarde e plumbit të prodhuesit:
    Në magazinë
    Jetëgjatësia:
    Nje vit
    Ipipi Nga:
    Hong Kong
    RoHS:
    Metoda e pagesës:
    Mënyra e dërgesës:
    Kategoritë familjare:
    Komponentët kyç Co, LTD është një distributori i Komponentëve Elektronikë i cili ofron kategori të produkteve duke përfshirë: LPDDR3, SLC Nand, DDR3, MODULE, LPDDR5, HBM Aquabolt, DDR4 and LPDDR4 ...
    Avantazhi Konkurrues:
    We specialize in Samsung Semiconductor K4B2G1646F-BYNB electronic components. K4B2G1646F-BYNB can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BYNB Atributet e produkteve

    Numri i pjesës : K4B2G1646F-BYNB
    prodhues : Samsung Semiconductor
    Përshkrim : 2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    seri : DDR3
    densitet : 2 Gb
    Org. : 128M x 16
    shpejtësi : 2133 Mbps
    tension : 1.35 V
    Temp. : 0 ~ 85 °C
    paketë : 96FBGA
    produkt Status : Mass Production

    Lajmet e fundit

    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Evolving Mobile Solutions: Samsung at MWC 2018
    Speed for the next generation of mobile devices
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    5G and Memory - from Connected Thinking to Connected Living
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
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