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Nëse vendndodhja juaj nuk është e shënuar, ju lutemi zgjidhni një nga sa vijon:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. M471B5173EB0-YK0

Samsung Semiconductor - M471B5173EB0-YK0

KEY Part #: K7359965

[25159copë aksionesh]

    Numri i pjesës:
    M471B5173EB0-YK0
    prodhues:
    Samsung Semiconductor
    Pershkrim i detajuar:
    DDR3 SODIMM 4 GB 1R x 8 1600 Mbps 1.35 V 204 (512M x 8) x 8 EOL.
    Koha standarde e plumbit të prodhuesit:
    Në magazinë
    Jetëgjatësia:
    Nje vit
    Ipipi Nga:
    Hong Kong
    RoHS:
    Metoda e pagesës:
    Mënyra e dërgesës:
    Kategoritë familjare:
    Komponentët kyç Co, LTD është një distributori i Komponentëve Elektronikë i cili ofron kategori të produkteve duke përfshirë: HBM Flarebolt, LPDDR5, DDR3, GDDR5, LPDDR4X, MODULE, LPDDR3 and LPDDR4 ...
    Avantazhi Konkurrues:
    We specialize in Samsung Semiconductor M471B5173EB0-YK0 electronic components. M471B5173EB0-YK0 can be shipped within 24 hours after order. If you have any demands for M471B5173EB0-YK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M471B5173EB0-YK0 Atributet e produkteve

    Numri i pjesës : M471B5173EB0-YK0
    prodhues : Samsung Semiconductor
    Përshkrim : DDR3 SODIMM 4 GB 1R x 8 1600 Mbps 1.35 V 204 (512M x 8) x 8 EOL
    seri : DDR3
    DDR : DDR3
    DIMM Lloji : SODIMM
    densitet : 4 GB
    Rank x Org. : 1R x 8
    shpejtësi : 1600 Mbps
    tension : 1.35 V
    Nr i Pin : 204
    Komponenti Përbërja : (512M x 8) x 8
    produkt Status : EOL

    Lajmet e fundit

    Automotive Driven by Small Packages Under the Hood
    Inside the building blocks of the 5G future
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Unlocking the Power of Cloud Computing
    Samsung Memory Solutions for Automotive
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
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